Electron transverse energy distribution in GaAs negative electron affinity cathodes: Calculations compared to experiments
نویسندگان
چکیده
منابع مشابه
Electron-trapping polycrystalline materials with negative electron affinity.
The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considerin...
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This work focuses on two issues crucial to achieving high throughput with a negative electron affinity semiconductor photocathode source. Monte Carlo simulations indicate that for a 50 kV system, as much as 8 mA of current may be delivered to the wafer to achieve a raw throughput of 20 8 in. wafers per hour with 0.1 mm minimum feature size ~assuming a resist sensitivity of 10 mC/cm!. In order t...
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Chemical hardness () and absolute electronegativity () have important applications in chemistry. Inthe conceptual Density Functional theory (DFT), these concepts has been associated with electronicenergy and the relationship with ionization energy (I) and electron affinity (A) of these concepts hasbeen given. In this study, graphical method was used in order to see the relationship with the ato...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1996
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.362992